GIPN3H60AT

450.00 грн. – 500.00 грн.

От 2 шт. - 450.00 грн.

Insulated Gate Bipolar Transistor (IGBT) Modules PTD IGBT & IPM. STGIPN3H60AT

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Description

GIPN3H60AT

GIPN3H60AT

GIPN3H60AT

Product attribute Attribute value

Manufacturer: STMicroelectronics

Product Category: Insulated Gate Bipolar Transistor (IGBT) Modules

RoHS:

Product: IGBT Silicon Modules

Configuration: 3-Phase Inverter

Collector-emitter voltage (VCEO), max .: 600 V

Collector-Emitter Saturation Voltage: 2.6 V

Continuous collector current @ 25 C: 3 A

Pd – Power Dissipation: 8 W

Packing / Unit: NDIP-26L

Minimum operating temperature: – 40 C

Maximum operating temperature: + 150 C

Packing: Bulk

Brand: STMicroelectronics

Height: 3.2mm

Length: 29.25 mm

Mounting Style: Through Hole

Operating temperature range: – 40 C to + 150 C

Product type: IGBT Modules

Series: STGIPN3H60AT

Subcategory: IGBTs

Technology: Si

Trade name: SLLIMM

Width: 12.55 mm

Product Weight: 4.595 g

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